docs/analysis/class-v6/hardware-future.md: one table over PIM and PNM (HBM-PIM, AiM, LPDDR5X-PIM, UPMEM), HBM3E, HBM4 and the custom HBM4E base die, fine-grained DRAM on logic, LPDDR6, 3D DRAM, RLDRAM 3 and Folded Banks, FPGA with HBM2e, wafer-scale, CXL, optical I/O, chiplets and UCIe, and SRAM at N2: energy per dependent read, latency, cost per GB, availability to a non-hyperscaler, the k_read and shadow k bands, the edge per joule at zero shadow against the 5090 and the M5 Max, and the one layer of the four that blunts each with a number. The three findings: a 2 GiB SRAM full store on one N2 reticle is the strongest five-year chip (13x to 17x per joule, about USD 0.3 per MH/s) and no layer reaches it (layer 2 moves its capex, not its joules; the shadow at k = 0.5 holds 4.8x); per-bank PIM is blind (1.6 percent of reads in-bank at 2 GiB) and the custom HBM4E base die is the f = 1 chip with its controller in the stack (6.5x to 14x), untouched by layers 1 to 4; the denominator is the wrong card (the M5 Max at 0.78 microjoules halves to thirds every chip edge). Section 5 carries the k bands for the research lane's chip rows; section 7 the four decisions with defaults and deadlines; section 9 the sources with URLs and dates. tools/ci/export-exclude.txt: docs/analysis/class-v6 is research, not public export.
Co-Authored-By: Claude Fable 5.1 <noreply@anthropic.com>
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